Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW65R070C6FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V72711+$51.501110+$48.5461100+$46.3510250+$46.0133500+$45.67551000+$45.29562500+$44.95795000+$44.7468 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW65R019C7FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V93831+$134.597210+$131.085950+$128.3940100+$127.4576200+$126.7554500+$125.81911000+$125.23392000+$124.6487 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPP90R1K2C3XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V45965+$4.908625+$4.545050+$4.2905100+$4.1814500+$4.10872500+$4.01785000+$3.981410000+$3.9269 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF067N65S3 Power Field Effect Transistor, MOSFET, N-channel, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V New74965+$34.106750+$32.6491200+$31.8329500+$31.62881000+$31.42482500+$31.19165000+$31.04587500+$30.9001 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V80935+$15.283750+$14.6306200+$14.2648500+$14.17341000+$14.08192500+$13.97745000+$13.91217500+$13.8468 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCP400N80Z Power Field Effect Transistor, MOSFET, N-channel, 14 A, 800 V, 0.34 ohm, 10 V, 4.5 V New53255+$12.311950+$11.7858200+$11.4911500+$11.41751000+$11.34382500+$11.25965000+$11.20707500+$11.1544 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH47N60_F133 Power Field Effect Transistor, MOSFET, N-channel, 47 A, 600 V, 0.058 ohm, 10 V, 3 V94061+$87.878410+$84.0576100+$83.3699250+$82.8349500+$81.99441000+$81.61232500+$81.07745000+$80.6189 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW18N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V new949410+$9.2436100+$8.7814500+$8.47331000+$8.45792000+$8.39635000+$8.31927500+$8.257610000+$8.2268 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPU04N60C3BKMA1 Power Field Effect Transistor, MOSFET, N-channel, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V1071 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPW15N60C3FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.25 ohm, 10 V, 3 V1212 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPP08N80C3XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 8 A, 800 V, 0.56 ohm, 10 V, 3 V1790 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPI08N80C3XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 8 A, 800 V, 0.56 ohm, 10 V, 3 V7480 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPA20N60C3XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V5178 -
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Category: Medium high voltage MOS transistorDescription: N Channel MOSFET, E-series, low quality factor, Vishay Semiconductor Vishay E-series MOSFET power supply is a high-voltage transistor with ultra-low maximum on resistance, low sensitivity value, and fast switching function. They provide various current ratings. Typical applications include servers and telecommunications power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). ###Features: Low sensitivity value (FOM) RDS (on) x Qg, low input capacitance (Ciss), low on resistance (RDS (on)), ultra-low gate charge (Qg), fast switching, reduced switching and conduction losses # # MOSFET transistor, Vishay Semiconductor2736 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHF22N60E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 21 A, 600 V, 0.15 ohm, 10 V, 2 V6129 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6024KNZ1C9 Power Field Effect Transistor, MOSFET, N-channel, 24 A, 600 V, 0.15 ohm, 10 V, 5 V New2086 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6020KNZC8 Power Field Effect Transistor, MOSFET, N-channel, 20 A, 600 V, 0.17 ohm, 10 V, 5 V New1791 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF190N60 Power Field Effect Transistor, MOSFET, N-channel, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V8712 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP8N80C Power Field Effect Transistor, MOSFET, N-channel, 8 A, 800 V, 1.29 ohm, 10 V, 5 V9764 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFP27N60KPBF. 场效应管, MOSFET, N沟道5274 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STP43N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V 新2663 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQPF7N80C 功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V1960 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP7N80C 功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V9604 -
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Category: Medium high voltage MOS transistorDescription: SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。2829 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP8N60C 功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V5500 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPW17N80C3FKSA1 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V9525 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW48N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V 新6187 -
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Category: Medium high voltage MOS transistorDescription: N 通道 MDmesh DM2 系列，STMicroelectronics MDmesh DM2 MOSFET 提供低 RDS(on) 和改进的二极管反向恢复时间，可提高效率，此系列经优化可用于全桥相移 ZVS 拓扑。 高 dV/dt 能力，可提高系统可靠性 符合 AEC-Q101 ### MOSFET 晶体管，STMicroelectronics1596 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFBF20PBF 功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V7514
